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Position in International Organization

  • Hongsheng Shi  / 
  • Education:
    Direction:  
  • E-mail: shihs@ms.xjb.ac.cn
    Postal Code: 830011
  • Address: Technical Institute of Physics & Chemistry Chinese Academy of Sciences 40-1 South Beijing Road Urumqi, Xinjiang 830011 China
Resume

2019.11-Present: Researcher fellowship 

Xinjiang Technical Institute of Physics&Chemistry, Chinese Academy of Science 

2007.5-2019.10: Assitant Professor, associate Professor(2008), Professor(2013) 

College of Materials Science and Engineering, China Jiliang University 

2004.1-2007.3: R&D senior engineer, General Electric China Co., Ltd 

2000.9-2004.1: Ph..D, Majored in Materials Engineering 

Shanghai Institute of Ceramics, Chinese Academy of Sciences 

1997.9-2000.7: Master degree, Majored in Solid State Physics 

Fujian Institute of Research on the structure of matters, Chinese Academy of Sciences 

1992.9-1996.7: Bachelor degree, Majored in Chemistry 

Chemistry department, Southwest Normal University
   
Main Research Areas and Achievements:
Expertise in bulk crystal growth, especially crystal growth by Bridgman method. Some high quality crystals with large sizes have been successfully grown by Bridgman method, such as LaBr3:CeSrI2:EuLaCl3:PrNaBi(WO4)2, etc.    
 
Main Honor

1、Science and Technology Progress Award in the Jiangxi Province, 2013. 

2、Science and Technology Progress Award in the Zhejiang Province, 2009. 

 

Representative Publications: 

[1] Hongsheng Shi, Dingzhong Shen, Guohao Ren, Haibing Zhang, Bo Gong, Qun Deng, Growth of NaBi(WO4)2 crystal by modified-Bridgman method, Journal of Crystal Growth2002, 240:459-462. 

[2] Hongsheng Shi,* Laishun Qin, Wenxiang Chai, Kangying Shu, The radiation induced colour centers in the NaBi(WO4)2 crystal, Journal of Alloys and Compounds, 2009, 475:510-512. 

[3] Qinhua Wei, Hongsheng Shi,* Xiaofeng Chen, Laishun Qin, Guohao Ren, Kangying Shu, Growth and scintillation properties of the Na2W2O7 crystal, Journal of Crystal Growth2010, 312: 1883-1885. 

[4] Hongsheng Shi,* Laishun Qin, Wenxiang Chai, Jiayu Guo, Qinhua Wei, Guohao Ren, Kangying Shu, The LaBr3:Ce Crystal Growth by Self-Seeding Bridgman Technique and Its Scintillation Properties, Crystal Growth & Design, 2010,10: 4433-4436. 

[5] Wei Qinhua, Shi Hongsheng*, Chai Wenxiang, Qin Laishun, Shu Kangying, Preparation and luminescence Properties of the Na2W2O7 Crystal, Chinese Physics Letter, 2011, vol28 No11: 118104. 

[6] Hongsheng Shi,* Wenxiang Chai, xiaofeng Chen, Laishun Qin, Kangying Shu, Growth andscintillation properties of the Eu2W3O12 crystal, Journal of Crystal Growth2012, 343:73-76. 

[7] Zhengguo Li, Hanbo Bao, Yanguo Ding, Hongsheng Shi,* Laishun Qin, Kangyin Shu, The radiation induced color centers of the LaBr3:Ce crystal, Radiation Measurements, 2014, vol65:14-17. 

[8] Qinhua Wei, Hongsheng Shi,* Zhenzhen Zhou, Guanghui Liu, Zhi Chen, Laishun Qin, Kangying Shu and Qian Liu, A study on the structure, luminescence and thermo-stability of polycrystalline Gd2Si2O7:Ce and (Gd,La)2Si2O7:Ce, Journal of Materials Chemistry C, 2017, 5:1443 – 1451 

[9] Qinhua Wei, Yiqing Liu, Yi Tao Miao, Yuxi Li, Hongsheng Shi,* Laishun Qin, E?ects of Lanthanum substitution on the luminescence properties and energy transfer mechanism of Gd9.33(SiO4)6O2:Ce polycrystalline, Journal of Luminescence, 2018, 194:610-616. 

[10] Qinhua Wei, Jia Lin, Hongsheng Shi,* Gao Tang, Wenxiang Chai, Laishun Qin, Enhanced Transparency of Rough Surface Sapphire by Surface Vitrifaction Process, Applied Materials & Interfaces, 2018, 10:7693-7696.
 

Authorized Invention Patents: 

[1] Hongsheng Shi, Kangying Shu, One method to produce the high purity anhydrous bromide compound, China, patent number: ZL 2010 1 0239945.0. 

[2] Hongsheng Shi, Kangying Shu, One method to prepare the cerium doped choride bromide lanthanum scintillation crystal, China, patent number: ZL 20111 0177572.3. 

 

Field of Research: 

My Research mainly focuses on two areas. One is the bulk crystal growth. The other is the optical-electric crystals, especially the non-linear optical crystal and the scintillation crystal. 

Commitment to research the situation

2019.11-Present: Researcher fellowship 

Xinjiang Technical Institute of Physics&Chemistry, Chinese Academy of Science 

2007.5-2019.10: Assitant Professor, associate Professor(2008), Professor(2013) 

College of Materials Science and Engineering, China Jiliang University 

2004.1-2007.3: R&D senior engineer, General Electric China Co., Ltd 

2000.9-2004.1: Ph..D, Majored in Materials Engineering 

Shanghai Institute of Ceramics, Chinese Academy of Sciences 

1997.9-2000.7: Master degree, Majored in Solid State Physics 

Fujian Institute of Research on the structure of matters, Chinese Academy of Sciences 

1992.9-1996.7: Bachelor degree, Majored in Chemistry 

Chemistry department, Southwest Normal University
   
Main Research Areas and Achievements:
Expertise in bulk crystal growth, especially crystal growth by Bridgman method. Some high quality crystals with large sizes have been successfully grown by Bridgman method, such as LaBr3:CeSrI2:EuLaCl3:PrNaBi(WO4)2, etc.    
 
Main Honor

1、Science and Technology Progress Award in the Jiangxi Province, 2013. 

2、Science and Technology Progress Award in the Zhejiang Province, 2009. 

 

Representative Publications: 

[1] Hongsheng Shi, Dingzhong Shen, Guohao Ren, Haibing Zhang, Bo Gong, Qun Deng, Growth of NaBi(WO4)2 crystal by modified-Bridgman method, Journal of Crystal Growth2002, 240:459-462. 

[2] Hongsheng Shi,* Laishun Qin, Wenxiang Chai, Kangying Shu, The radiation induced colour centers in the NaBi(WO4)2 crystal, Journal of Alloys and Compounds, 2009, 475:510-512. 

[3] Qinhua Wei, Hongsheng Shi,* Xiaofeng Chen, Laishun Qin, Guohao Ren, Kangying Shu, Growth and scintillation properties of the Na2W2O7 crystal, Journal of Crystal Growth2010, 312: 1883-1885. 

[4] Hongsheng Shi,* Laishun Qin, Wenxiang Chai, Jiayu Guo, Qinhua Wei, Guohao Ren, Kangying Shu, The LaBr3:Ce Crystal Growth by Self-Seeding Bridgman Technique and Its Scintillation Properties, Crystal Growth & Design, 2010,10: 4433-4436. 

[5] Wei Qinhua, Shi Hongsheng*, Chai Wenxiang, Qin Laishun, Shu Kangying, Preparation and luminescence Properties of the Na2W2O7 Crystal, Chinese Physics Letter, 2011, vol28 No11: 118104. 

[6] Hongsheng Shi,* Wenxiang Chai, xiaofeng Chen, Laishun Qin, Kangying Shu, Growth andscintillation properties of the Eu2W3O12 crystal, Journal of Crystal Growth2012, 343:73-76. 

[7] Zhengguo Li, Hanbo Bao, Yanguo Ding, Hongsheng Shi,* Laishun Qin, Kangyin Shu, The radiation induced color centers of the LaBr3:Ce crystal, Radiation Measurements, 2014, vol65:14-17. 

[8] Qinhua Wei, Hongsheng Shi,* Zhenzhen Zhou, Guanghui Liu, Zhi Chen, Laishun Qin, Kangying Shu and Qian Liu, A study on the structure, luminescence and thermo-stability of polycrystalline Gd2Si2O7:Ce and (Gd,La)2Si2O7:Ce, Journal of Materials Chemistry C, 2017, 5:1443 – 1451 

[9] Qinhua Wei, Yiqing Liu, Yi Tao Miao, Yuxi Li, Hongsheng Shi,* Laishun Qin, E?ects of Lanthanum substitution on the luminescence properties and energy transfer mechanism of Gd9.33(SiO4)6O2:Ce polycrystalline, Journal of Luminescence, 2018, 194:610-616. 

[10] Qinhua Wei, Jia Lin, Hongsheng Shi,* Gao Tang, Wenxiang Chai, Laishun Qin, Enhanced Transparency of Rough Surface Sapphire by Surface Vitrifaction Process, Applied Materials & Interfaces, 2018, 10:7693-7696.
 

Authorized Invention Patents: 

[1] Hongsheng Shi, Kangying Shu, One method to produce the high purity anhydrous bromide compound, China, patent number: ZL 2010 1 0239945.0. 

[2] Hongsheng Shi, Kangying Shu, One method to prepare the cerium doped choride bromide lanthanum scintillation crystal, China, patent number: ZL 20111 0177572.3. 

 

Field of Research: 

My Research mainly focuses on two areas. One is the bulk crystal growth. The other is the optical-electric crystals, especially the non-linear optical crystal and the scintillation crystal. 

(86) 991-3838931
lhskj@ms.xjb.ac.cn
(86)991-3838957
40-1 Beijing Road Urumqi, XinjiangChina