2019/11-Present Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Professor
2012/11-2019/10 Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Associate Professor
2012/07-2012/10 Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Assistant Research Fellow
2007/09-2012.06 University of Chinese Academy of Sciences, Microelectronics and Solid-State Electronics, Ph. D. degree
2002/09-2006/07 XI’AN University of Technology, Electronics Science and Technology, B. S. degree
Main Research Areas and Achievements：
Dr. Jiangwei Cui is mainly engaged in the research on radiation effects of CMOS devices. The research results have been applied to major device development units, engineering units and scientific research units in this field, providing support for the design and evaluation of CMOS devices. She presided over and completed more than 10 scientific research projects such as the National Natural Science Foundation of China, published more than 80 papers in the database, of which more than 60 were included in SCI/EI, and authorized 2 invention patents.
Main Honor：
2021 First Prize of Science and Technology Progress of Xinjiang Uygur Autonomous Region (First Completer)
2015 First Prize of Science and Technology Progress of Xinjiang Uygur Autonomous Region (Ninth Completer)
Outstanding Scientific and Technological Worker of the 8th Chinese Institute of Electronics
Representative Publications：
[1] Jiangwei Cui*, Qiwen Zheng*, Yudong Li, et.al, Impact of High TID Irradiation on Stability of 65 nm SRAM Cells. IEEE Transactions on Nuclear Science, 2022, 69(5): 1044-1050, SCI
[2] Qiwen Zheng*, Jiangwei Cui*, Xuefeng Yu, Yudong Li, Wu Lu, Chengfa He, Qi Guo. Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology. IEEE Transactions on Nuclear Science, 2021, 68(10): 2516-2523, SCI
[3] Qiwen Zheng*, Jiangwei Cui*, Xuefeng Yu, Yudong Li, Wu Lu, Chengfa He, Qi Guo. Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers. IEEE Transactions on Nuclear Science, 2021, 68(7): 1423-1429, SCI
[4] Xu Cui, Jiangwei Cui*, Qiwen Zheng*, Ying Wei, Yudong Li, Qi Guo. Bias Dependence of Total Ionizing Dose Effects in 22 nm Bulk nFinFETs. Radiation Effects and Defects in Solids, 2022, 177(3-4), on line, SCI
[5] Jiangwei Cui, Xuefeng Yu, Diyuan Ren, Jian Lu, The Influence of Channel Size on Total Dose Irradiation and Hot-Carrier Effects of Sub-Micro NMOSFET, Acta Phys. Sin., 2012, 61(2): 026102, SCI
[6] Jiangwei Cui, Xuefeng Yu, Diyuan Ren, Relationship between silicon-on-insulator kink and radiation effects, International Journal of Modern Physics E, 2011, 20(6): 1409-1417, SCI
[7] Jiangwei Cui, Qiwen Zheng, Bingxu Ning, Xuefeng Yu, Kai Zhao, Ying Wei, Wu Lu, Chengfa He, Diyuan Ren, Fang Yu, Liewei Xu, Qi Guo, Hot-Carrier Effect on TID Irradiated Short-Channel UTTB FD-SOI n-MOSFETs, 2018, 2018 IEEE Radiation Effects Data Workshop (REDW), EI
[8] Baoshun Wang, Jiangwei Cui*, Qi Guo, Qiwen Zheng, Ying Wei, Shanxue Xi, The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET, Journal of Semiconductors, 2020, 41(12): 122102, EI
[9] Jiangwei Cui, Qiwen Zheng, Xuefeng Yu, Zhongchao Cong, Hang Zhou, Qi Guo, Lin Wen, Ying Wei and Diyuan Ren, Hot-carrier effects on irradiated deep submicron NMOSFET, Journal of Semiconductors, 2014, 35(07): 56-59, EI
[10] Jiangwei Cui, Yaoguo Xue, Xuefeng Yu, Diyuan Ren, Jian Lu, Xingyao Zhang, Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs, Journal of Semiconductors, 2012, 33(1): 014006, EI
Authorized Invention Patents：
[1] Jiangwei Cui, Qiwen Zheng, Ying Wei, Jing Sun, Xuefeng Yu, Qi Guo, Wu Lu, Chengfa He, Diyuan Ren, A Test Method for the Effect of Total Dose Irradiation on PMOSFET Negative Bias Voltage Temperature Instability, ZL 201711329107.0
[2] Qiwen Zheng, Jiangwei Cui, Xiaolong Li, Ying Wei, Xuefeng Yu, Yudong Li, Qi Guo, A Circuit-Level Total Dose Radiation Effect Simulation Method, ZL 202011125626.7
[3] Zheng Qiwen, Cui Jiangwei, Li Xiaolong, Wei Ying, Yu Xuefeng, Li Yudong, Guo Qi, A circuit simulation method for coupling total dose effect and process fluctuation, ZL202011125363.X
Field of research：
Microelectronics and Solid-State Electronics
