Jie Feng, female, Born in 1985, Urumqi, doctor, Associate Research Fellow, Member of China Electronics Society, IEEE member. She is mainly engaged in the research of radiation effect mechanism and radiation hardening technology of photoelectric imaging system.
Learning Experience:
2009.09-2014.07 Institute of Optics and Electronics, Chinese Academy of Sciences , Optical engineering, Doctor of Engineering
2005.09-2009.07 Chongqing University of Posts and Telecommunications，Optical information science and technology，Bachelor of Science
Work Experience:
2021.11-now Xinjiang Institute of Physics and Chemistry, Chinese Academy of Sciences, Associate Research Fellow
2016.01-2021.11 Xinjiang Institute of Physics and Chemistry, Chinese Academy of Sciences, Assistant Research Fellow
2014.07-2016.01 Anhui Science And Technology University, Assistant
Main Research Areas and Achievements：
Dr. Feng is mainly engaged in the research of radiation effect mechanism and radiation hardening technology of photoelectric imaging system. She presided over the Youth Science Fund of the National Natural Science Foundation of China, the general project of the National Natural Science Foundation of China, the West Light Foundation of the Chinese Academy of Sciences, the high-level talent introduction project of the autonomous region, the Tianshan youth program of the autonomous region, and the projects entrusted by enterprises. As a backbone, Dr. Feng participated in national major special sub projects, key funds of the National Natural Science Foundation of China, basic scientific research projects, and key deployment projects of the Chinese Academy of Sciences as the first author, Dr. Feng published 15 articles included in SCI and EI, applied for 22 invention patents, including 12 authorized patents, and published a translation (Handbook of Optical Design). As the main drafter, Dr. Feng submitted two industry standards of the eighth Academy of aerospace for approval, which provided support for the research and development of domestic devices and important aerospace model tasks (high-resolution earth observation and remote sensing series satellites). It has accumulated a certain research foundation in the on orbit maintenance technology of photoelectric loads. The relevant research results have been successfully applied to the space astronomical observation system and the "CX-3" space debris detection scientific satellite, and obtained user application certificates.
Main Honor：
1. Won the first prize of science and technology progress of Xinjiang Uygur Autonomous Region in 2018
2. Advanced individuals from research institutes and key laboratories
3.Won the "first prize of excellent paper" at the 13th Radiation Resistant Electronics and Electromagnetic Pulse Academic Exchange Conference
Representative Publications：
1. Jie Feng，Yudong Li*，Lin Wen, Dong Zhou, Lindong Ma.Degradation mechanism for photon transfer curve of CMOS image sensor after irradiation[J].Optics and Precision Engineering, 2017, 25(10):2677-2681.
2. Jie Feng，Yudong Li，Lin Wen, Qi Guo. Influence mechanism of CMOS sensor radiation damage on the performance of visual position and attitude measurement system[J]. Infrared and Laser Engineering, 2017, 46(7): S117002.
3. Feng Jie*, Li Yudong, Wen Lin, Guo Qi, Zhang Xingyao. Study the performance of star sensor influenced by space radiation damage of image sensor, SPIE, 2017,10710, 107100H-1–107100H-7.
4.Jie Feng，Yudong Li，Lin Wen, Qi Guo.Degradation mechanism of star sensor performance caused by radiation damage of CMOS image sensor[J]. Infrared and Laser Engineering, 2020, 49(5): 20190555-1–20190555-7.
5. J.Feng,* Y.-D.Li，J.Fu, L.Wen, C.-F.He, Q.Guo. Effect of Total Ionizing Dose Damage on 8-Transistor CMOS Star Sensor Performance[J]. Semiconductors, 2021, 55(1):108-115.
6. Jie Feng，Lin Wen, Yudong Li*，Qi Guo. On-orbit testing method of CCD charge transfer efficiency based on hot pixels[J]. MODERN APPLIED PHYSICS, 2017, 8(4):040609-1-040609-5.
7. Jie Feng, Lin Wen* , Yu-Dong Li , Cheng-Fa He, Qi Guo. Study the performance of star sensor influenced by space radiation damage of image sensor[C]// 2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED). 2019.
8. Jie Feng，Yudong Li，Jing Fu, Lin Wen，Qi Guo. 10MeV Proton Radiation Effect on 8-Transistor CMOS Star Sensor Performance[J]. Atomic Energy Science and Technology,2021, 55(12):23-30.
9. FU Jing, FENG Jie *, LI YuDong *, WEN Lin ,Qi Guo. Degradation Characteristics of Proton Irradiated 8T CMOS Image Sensor [J]. Atomic Energy Science and Technology, 2021,55(12):16-22.
10.Haichuan Wang, Jie Feng*, Yudong Li*.Noise of CIS effect on imaging resolution of camera under high radiation environment[J]. Atomic Energy Science and Technology, 2022,56(4):775-782.
11. Jie Feng*, Jing Fu, Yu-Dong Li*, Lin Wen, Qi Guo. Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal–Oxide–Semiconductor Color Image Sensors [J].Journal of Nanoelectronics and Optoelectronics,2021, 16:1-7.
12. Fu, J, Cai, YL, Li YD, Feng, J *,Wen, L , Zhou D, Guo, Q *.Single event transient effect of frontside and backside illumination image sensors under proton irradiation [J].ACTA PHYSICA SINICA,2022,71(5):1-9.
13. Jing Fu, Lin Wen, Jie Feng*, Ying Wei, et al. Quantum Efficiency Simulation and Analysis of Irradiated Complementary Metal-Oxide Semiconductor Image Sensors[J]. Journal of Nanoelectronics and Optoelectronics, 2022, 17:1-8.
14. Jie Feng, Yihao Cui, Yudong Li*,Lin Wen, Qi Guo. Influence mechanism and recognition algorithm of CMOS APS radiation damage on star sensor star map recognition [J/OL]. ACTA PHYSICA SINICA:1-16[2022-09-04].http://kns.cnki.net/kcms/detail/11.1958.O4.20220617.0934.004.html
15. Jing Fu, Jie Feng*, Yu-Dong Li*, Lin Wen, Dong Zhou & Qi Guo .Effect of proton beam irradiation on the tracking efficiency of CMOS image sensors[J].Radiation Effects and Defects in Solids, 2022,177:5-6, 590-603.
Authorized Invention Patents：
1. Jie Feng, Xiang Zhang, Lin Wen, Lindong Ma, Yudong Li, Qi Guo, A method for rapid identification of random telegraph signal of complementary metal-oxide-semiconductor sensors after irradiation, China, invention patent, authorization number: ZL201710200747.5.
2. Jie Feng, Yudong Li, Lin Wen, Xin Yu, Xingyao Zhang, Qi Guo, A cosmic ray-based on-orbit test method for charge transfer efficiency of charge-coupled devices, China, invention patent, authorization number: ZL201710507965.3.
3. Jie Feng, Yudong Li, Lin Wen, Dong Zhou, Qi Guo, A method for saturation gray values of large area array color CMOS Image Sensors after irradiation based on channel separation, China, invention patent, authorization number: ZL202010385703.6.
4. Jie Feng, Yudong Li, Lin Wen, Dong Zhou, Qi Guo, A method for evaluating dark current after irradiation of large area array color CMOS image sensor based on channel separation, China, invention patent, authorization number: ZL202010385562.8.
5. Jie Feng，Chao Deng，Zhengpeng Yao，Tingwen Xing，A method for eliminating fringe pattern distortion of circularly symmetrical phase-type computational holographic substrates, China, invention patent, authorization number: ZL201310127454.0.
6. Jie Feng，Chao Deng，Zhengpeng Yao，Tingwen Xing，Apparatus and method for detecting and computing holographic substrate surface shape and material non-uniformity errors, China, invention patent, authorization number: ZL201310113487.X
7. Qi Guo，Yudong Li，Jie Feng，Lin Wen，Lindong Ma ,Test method for full well capacity of CMOS active pixel sensor after irradiation, China, invention patent, authorization number: ZL201710205736.6.
8. Lin Wen，Yudong Li，Jie Feng，Tianhui Wang，Xin Yu，Dong Zhou，Qi Guo, An on-orbit test method for charge transfer efficiency of charge-coupled devices based on hot pixels, China, invention patent, authorization number: ZL201710507516.9.
9. Yudong Li，Jie Feng，Lindong Ma，Lin Wen，Dong Zhou，Qi Guo，Test Method for Photon Transfer Curve (ptc) and Conversion Gain of Complementary Metal Oxide Semiconductors After Irradiation, China, invention patent, authorization number: ZL201710077573.8.
10.Li yu dong，Wen lin，Feng jie，Zhou dong，Zhang xing yao，Guo qi，A general test method for charge transfer efficiency of charge-coupled devices based on light spot, China, invention patent, authorization number: ZL201710507786.X.
11. Yudong Li，Lin Wen，Jie Feng，Weilei Shi，Xin Yu，Liya Ma·Hei Ni，Qi Guo，On-line acquisition method of single-event effect test images of complementary metal oxide semiconductor image sensors, China, invention patent, authorization number: ZL201810250683.4.
Field of research：
Research on radiation effect and damage mechanism of photoelectric imaging devices, radiation effect of photoelectric system and radiation hardening technology
