He is mainly engaged in the research of ionizing radiation effect, damage mechanism and test evaluation method of electronic components. He has presided over more than 20 national projects, published more than 200 papers, and applied for and authorized more than 30 national invention patents. He has won 1 award for Outstanding contribution to science and technology in Xinjiang Uygur Autonomous Region, 4 first prizes, 1 second prizes and 2 third prizes for scientific and technological progress. He won the honorary titles of "Advanced Worker" and "Most Beautiful Science and Technology Worker" of Xinjiang Uygur Autonomous Region, "Excellent Science and Technology Worker" of Chinese Institute of Electronics, and "Zhu Liyuehua" Excellent Teacher of Chinese Academy of Sciences.
Currently, he is president of Xinjiang Nuclear Society, Director of China Nuclear Society, Executive Director of Radiation Physics Branch, Executive Director of Nuclear Electronics and Nuclear Detection Technology Branch, and member of Integrated Microsystem Modeling and Simulation Committee of China Simulation Society.
Representative Publications：
[1]Li, YD; Liu, BK; Wen, L; Wei, Y; Zhou, D; Feng, J; Guo, Q.Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal[J].Radiation Physics and Chemistry, 2021.
[2]Cai Yu Long、Wen Lin、Li Yudong、Guo Qi*、Feng jie、Zhou Dong、Zhang Xiang、Liu Bingkai、Fu Jing. Single-Event effects in pinned photodiode CMOS image sensors: SET and SEL [J]. IEEE Transactions on Nuclear Science, 2020.
[3]Bingkai Liu、Yudong Li*、Lin Wen、Dong Zhou、Jie Feng、Xiang Zhang、Yulong Cai、Jing Fu、Jiawei Chen、Qi Guo. Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors[J]. Results in Physics, 2020, 19:103443.
[4]Qiwen Zheng,Jiangwei Cui, Liewei Xu, Bingxu Ning, Kai Zhao, Mingjie Shen,Xuefeng Yu, Wu Lu, Chengfa He, Diyuan Ren, and Qi Guo. Total ionizing dose responses of forward body bias ultra-thin body and buried oxide FD-SOI transistors[J]. IEEE Transactions on Nuclear Science,2019.
[5]Zhang Xiang,Li Yudong, Wen Lin,Zhou Dong,Feng Jie,Ma Lin-Dong,Wang Tian-Hui, Cai Yulong,Wang Zhiming,Guo Qi*. Radiation effects due to 3 MeV proton irradiations on back-side illuminated CMOS image sensors [J].Chinese Physics Letters, 2018.
Field of research：
1.Solid state radiation physics
2.Radiation effect of microelectronic and photoelectronic devices
3.In-orbit measurement of space radiation dose
