2017.10 - present, Professor, Vice Director of Solid State Radiation Physics Laboratory, Xinjiang Technical Institute of Physics and Chemistry, CAS.
2015.07 - 2016.06, Visiting Scholar, Technische Universiteit Delft.
2014.11 - 2017.09, Professor, Laboratory of Materials Physics and Chemistry, Xinjiang Technical Institute of Physics and Chemistry, CAS.
2009.11 - 2014.10, Associate Professor, Laboratory of Materials Physics and Chemistry, Xinjiang Technical Institute of Physics and Chemistry, CAS.
2009.07 - 2009.10, research assistant, Laboratory of Materials Physics and Chemistry, Xinjiang Technical Institute of Physics and Chemistry, CAS.
Main Research Areas and Achievements:
Yudong LI, Ph.D., Professor and doctoral supervisor. He received the Ph.D. degree in 2009 from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences (CAS). His research interest focuses on radiation effects and radiation hardening technique of electronic device and system. He has presided over more than twenty projects including the 863 project, the National Natural Science Foundation of China, the key deployment projects of the CAS, the equipment development project of the CAS, and the "Light of West" project of the CAS. He has published more than 110 papers, authorized 18 invention patents, and registered 17 software copyrights.
Representative Publications:
[1] Bingkai LIU, Yudong LI*, Lin WEN, et al. Displacement damage effects in backside illuminated CMOS image sensors. IEEE Transactions on Electron Devices, 2022, 69(6): 2907-2914.
[2] Jiawei CHEN, Yudong LI*, Maliya HEINI, et al. Displacement damage effects in proton irradiated vertical-cavity surface-emitting lasers. Japanese Journal of Applied Physics, 2022, 61(1): 012001.
[3] Yudong LI, Bingkai LIU, Lin WEN, et al. Role of the oxide trapped charges in charge coupled device ionizing radiation induced dark signal. Radiation Physics and Chemistry, 2021, 189: 109722.
[4] Bingkai LIU, Yudong LI*, Lin WEN, et al. Analysis of dark signal degradation caused by 1 MeV neutron irradiation on backside-illuminated CMOS image sensors. Chinese Journal of Electronics, 2021, 30(01): 180-184.
[5] Bingkai LIU, Yudong LI*, Lin WEN, et al. Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors. Results in Physics, 2020, 19: 103443.
[6] Xiang ZHANG, Yudong LI*, Lin WEN, et al. Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors. Journal of Nuclear Science and Technology, 2020, 57(9): 1015-1021.
[7] Bingkai LIU, Yudong LI*, Lin WEN, et al. Investigation of random telegraph signal in CMOS image sensors irradiated by protons. Journal of Nuclear Science and Technology, 2020, 58(5): 610-619.
[8] Jiawei CHEN, Yudong LI*, Maliya HEINI, et al. Investigation of displacement damage to vertical-cavity surface-emitting red lasers due to 1 MeV electron radiation, AIP Advances, 2020, 10(11): 115216.
[9] Yudong LI, Lin WEN, Jianyu HUANG, et al. Analysis on the radiation effects of a charge-coupled device in a space debris detection satellite in orbit. Journal of Remote Sensing, 2019, 23(1): 116-124.
[10] Yulong CAI, Qi GUO, Yudong LI*, et al. Heavy ion-induced single event effects in active pixel sensor array, Solid State Electronics, 2019, 152: 93-99.
Field of research:
- Radiation effect mechanism of semiconductor materials and devices
- Radiation-hard electronic devices and intelligent equipment
- Photoelectric imaging device and system
