2. 2014.10, Associate Professor, Xinjiang Technical Institute of Physics and Chemistry, CAS.
3, 2008.07, research assistant, Xinjiang Technical Institute of Physics and Chemistry, CAS.
Main Research Areas and Achievements：
Wen Lin, Ph.D., Professor and doctoral supervisor, graduated from University of Chinese Academy of Sciences in 2015 with a PhD degree in microelectronics and solid-state electronics. His main research area is radiation effect of optoelectronic devices. He has published more than 60 papers. He has obtained 9 Chinese invention patents and 6 software copyright registrations.
Main Honor：
1.Won the 2016 Xinjiang Youth Science and Technology Talents Training Project - Outstanding Young Science and Technology Talents,
2.2016 Chinese Academy of Sciences "Western Light" talent training plan,
3.2017 Tianshan Talents Program of Xinjiang Autonomous Region,
4.2019 Xinjiang Tianshan Youth-Outstanding Young Technological Talents,
5.In 2021, it will be supported by talent projects such as the "Light of the West" talent training plan of the Chinese Academy of Sciences.
6.He has won 3 first prizes for scientific and technological progress in Xinjiang Uygur Autonomous Region in 2014, 2015 and 2018.
Representative Publications：
[1] Wu P , Wen L , Xu Z Q , et al. Synergistic effects of total ionizing dose and radiated electromagnetic interference on analog-to-digital converter[J]. NUCL SCI TECH, 2022, 33(3):9.
[2] Liu B , Yudong L I , Wen L , et al. Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors[J]. Chinese Journal of Electronics, 2021, 30(1).
[3] Liu B , Li Y , Wen L , et al. Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors[J]. Results in Physics, 2020, 19:103443.
[4] Liu B , Li Y , Wen L , et al. A study of hot pixels induced by proton and neutron irradiations in charge coupled devices[J]. Radiation Effects and Defects in Solids, 2020:1-11.
[5] Zhang X , Li Y , Wen L , et al. Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors[J]. Journal of Nuclear ence and Technology, 2020(6):1-7.
[6] Cai Y , Wen L , Li Y , et al. Single Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL[J]. IEEE Transactions on Nuclear Science, 2020, PP(99):1-1.
[7] Cai Y L , Li Y D , Wen L , et al. Heavy ion-induced single event effects in active pixel sensor array[J]. Solid State Electronics, 2018.
[8] WEN Lin, LI Yu-dong, GUO Qi, WANG Chao-min. Total ionizing dose effect and damage mechanism on saturation output voltage of charge coupled device. Fourth Seminar on Novel Optoelectronic Detection Technology and Application(NDT17), SPIE, Vol.10697, 2018.2.20, 10697-174.
[9] WEN Lin, LI Yu-dong, ZHOU Dong, FENG Jie, GUO Qi, ZHANG Xing-yao, YU Xin. Degradation of dark signal of CCD exposed to 3MeV and 10MeV proton. Young Scientists Forum 2017, SPIE, Vol.10710, 2018.3.5, 10710-34
[10]Xiang Zhang, Yu-Dong Li, Lin Wen, et al.. Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors[J]. Chinese Physics Letters, 2018.
Field of research：
1. Solid state radiation physics
2. Microelectronics and solid-state electronics
3. Radiation effect of photoelectric devices
