Xuefeng YU, male, professor and doctoral supervisor of Xinjiang Institute of Physical and Chemical Technology, Chinese Academy of Sciences. Since 1986, he has been engaged in the research of semiconductor radiation physics and taken charge of many important research tasks such as national "863", "973", "science and technology support" projects, National Natural Science Foundation of China, etc. Up to now, he has gotten a number of important research achievements in the field of radiation effect, damage mechanism and radiation hardening of satellite microelectronic devices.
Xuefeng YU has won the Sixth China outstanding Science and Technology Youth Award, the first prize of scientific and technological progress of the Chinese Academy of Sciences, the first, second and third prizes of scientific and technological progress of the Xinjiang Uygur Autonomous Region, enjoyed special government subsidies issued by the State Council, and published more than 100 papers.
Main research fields:
- Radiation effect and damage mechanism of electronic devices;
- Reliability guarantee technology and evaluation method of electronic devices applied in the space.
Representative articles:
(1) Xiaowen LIANG; Jiangwei CUI; Qiwen ZHENG; Jinghao ZHAO; Xuefeng YU*; Jing SUN; Dan ZHANG; Qi GUO ; Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET, Radiation Effects and Defects in Solids, 2021, 12(176).
(2) Haonan FENG; Sheng YANG; Xiaowen LIANG; Dan ZHANG; Xiaojuan PU; Xu CUI; Haiyang WANG; Jing SUN; Xuefeng YU*; Qi GUO ; Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs, Journal of Nanoelectronics and Optoelectronics, 2021, 16(9): 1423-1429.
(3) Sheng YANG; Xiaowen LIANG; Jiangwei CUI; Qiwen ZHENG; Jing SUN; Mohan LIU; Dan ZHANG; Haonan FENG; Xuefeng YU*; Chuanfeng XIANG; Yudong LI; Qi GUO ; Impact of switching frequencies on the TID response of SiC power MOSFETs, Journal of Semiconductors, 2021, 42(8): 1-4.
(4) Xiaowen LIANG; Jiangwei CUI; Qiwen ZHENG; Jinghao ZHAO; Xuefeng YU*; Jing SUN; Dan ZHANG; Qi GUO ; Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET, Radiation Effects and Defects in Solids, 2020, 2020(1).
(5) Qiwen ZHENG; Jiangwei CUI; Xuefeng YU; Wu LU; Chengfa HE; Teng MA; Jinghao ZHAO; Diyuan REN; Qi GUO ; Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose, IEEE Transactions on Nuclear Science, 2018, 65(2): 691-697.
(6) Haonan FENG, Sheng YANG, Xiaowen LIANG, Dan ZHANG, Xiaojuan PU, Jing SUN, Ying WEI, Jiangwei CUI, Yudong LI, Xuefeng YU*, Qi GUO. Static and Dynamic Radiation Damage of Silicon Carbide VDMOS and Their Comparison[J]. Atomic Energy Science and Technology, 2022, 56(4): 767-774.
(7) Xiaowen LIANG, Haonan FENG, Xiaojuan PU, Jiangwei CUI, Jing SUN, Ying WEI, Dan ZHANG, Xuefeng YU, Qi GUO. Study of heavy ion induced single event gate rupture effect in SiC MOSFETs [J]. Japanese Journal of Applied Physics, 2022, 61(8): 084002.
(8) Study of heavy ion induced single event gate rupture effect in SiC MOSFETs [J]. Japanese Journal of Applied Physics, 2022, 61(8): 084002.
(9) Teng MA, Qi-Wen ZHENG, Jiang-Wei CUI, Hang ZHOU, Dan-Dan SU, Xue-Feng YU*, Qi GUO. An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation, CHINESE PHYSICS LETTERS, 2017.6, 34(7).
(10) Qi-Wen ZHENG, Jiang-Wei CUI, Hang ZHOU, Yu-De ZHAO, Xue-Feng YU*, Wu LU, Qi GUO, Di-Yuan REN. Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation, Chinese Physics B, 2015.10, 24(10).
(11) Qiwen ZHENG, Jiangwei CUI, Mengxin LIU, Dandan SU, Hang ZHOU, Teng MA, Xuefeng YU, Wu LU, Qi GUO, Fazhan ZHAO. Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin, CHINESE PHYSICS B, 2017, 26(9).
Research area:
Radiation and reliability physics of microelectronic devices.
