Yu Xuefeng has won the Sixth China outstanding science and Technology Youth Award, the first prize of scientific and technological progress of the Chinese Academy of Sciences, the first and second and third prizes of scientific and technological progress of the Xinjiang Uygur Autonomous Region, enjoyed special government subsidies issued by the State Council, and published more than 100 papers.
Main research fields:
1. Radiation effect and damage mechanism of electronic devices;
2. Reliability guarantee technology and evaluation method of electronic devices applied in the space
Representative articles:
(1) Xiaowen Liang; Jiangwei Cui; Qiwen Zheng; Jinghao Zhao; Xuefeng Yu*; Jing Sun; Dan Zhang; Qi Guo ; Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET, Radiation Effects and Defects in Solids, 2021, 12(176)
(2) Haonan Feng; Sheng Yang; Xiaowen Liang; Dan Zhang; Xiaojuan Pu; Xu Cui; Haiyang Wang; Jing Sun; Xuefeng Yu*; Qi Guo ; Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs, Journal of Nanoelectronics and Optoelectronics, 2021, 16(9): 1423-1429
(3) Yang Sheng; Liang Xiaowen; Cui Jiangwei; Zheng Qiwen; Sun Jing; Liu Mohan; Zhang Dan; Feng Haonan; Yu Xuefeng*; Xiang Chuanfeng; Li Yudong; Guo Qi ; Impact of switching frequencies on the TID response of SiC power MOSFETs, Journal of Semiconductors, 2021, 42(8): 1-4
(4) Xiaowen Liang; Jiangwei Cui; Qiwen Zheng; Jinghao Zhao; Xuefeng Yu*; Jing Sun; Dan Zhang; Qi Guo ; Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET, Radiation Effects and Defects in Solids, 2020, 2020(1)
(5) Qiwen Zheng; Jiangwei Cui; Xuefeng Yu; Wu Lu; Chengfa He; Teng Ma; Jinghao Zhao; Diyuan Ren; Qi Guo ; Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose, IEEE Transactions on Nuclear Science, 2018, 65(2): 691-697
(6) FENG Haonan, YANG Sheng, LIANG Xiaowen, ZHANG Dan, PU Xiaojuan, SUN Jing, WEI Ying, CUI Jiangwei, LI Yudong, YU Xuefeng*, GUO Qi. Static and Dynamic Radiation Damage of Silicon Carbide VDMOS and Their Comparison[J]. Atomic Energy Science and Technology, 2022, 56(4): 767-774.
(7) Liang Xiaowen, Feng Haonan, Pu Xiaojuan, Cui Jiangwei, Sun Jing, Wei Ying, Zhang Dan, Yu Xuefeng, Guo Qi.Study of heavy ion induced single event gate rupture effect in SiC MOSFETs [J]. Japanese Journal of Applied Physics, 2022, 61(8): 084002.
(8) Study of heavy ion induced single event gate rupture effect in SiC MOSFETs [J]. Japanese Journal of Applied Physics, 2022, 61(8): 084002.
(9) Ma, Teng ; Zheng, Qi-Wen; Cui, Jiang-Wei; Zhou, Hang; Su, Dan-Dan; Yu, Xue-Feng * ; Guo, Qi An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation， CHINESE PHYSICS LETTERS 2017.6 34(7)
(10) Zheng Qi-Wen; Cui Jiang-Wei ; Zhou Hang; Yu De-Zhao; Yu Xue-Feng(*) ; Lu Wu; Guo Qi; Ren Di-Yuan， Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation， Chinese Physics B 2015.10 24 (10)
(11) Zheng, Qiwen; Cui, Jiangwei; Liu, Mengxin; Su, Dandan; Zhou, Hang; Ma, Teng; Yu, Xuefeng;Lu, Wu; Guo, Qi; Zhao, Fazhan ; Direct measurement and analysis of total ionizing dose effect on130 nm PD SOI SRAM cell static noise margin, CHINESE PHYSICS B, 2017, 26(9)
Research area:
Radiation and reliability physics of microelectronic devices
