2019/11 - Present: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Associate Professor
2015/07 - 2019/10: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Assistant Research Fellow
2010/09 - 2015.06: University of Chinese Academy of Sciences, Microelectronics and Solid-State Electronics, Ph. D. degree
2005/09 - 2009/07: Shandong University, Applied Physics, B. S. degree
Main Research Areas and Achievements:
Dr. Qiwen ZHENG is mainly engaged in the research of radiation damage mechanism, model and reinforcement principle of advanced CMOS technology. He has published 56 papers in IEEE TNS, NSREC, RADECS and other famous journals and international conferences on radiation effects of semiconductor devices. He presided over and completed more than five scientific research projects such as the National Natural Science Foundation of China.
Main Honors:
2021 First Prize of Science and Technology Progress of Xinjiang Uygur Autonomous Region (3rd)
2020 Outstanding youth fund of Xinjiang Natural Science Foundation
Outstanding Scientific and Technological Worker of the 8th Chinese Institute of Electronics
2019 Youth Innovation Promotion Association of Chinese Academy of Sciences
Representative Publications:
[1] Qiwen ZHENG, Jiangwei CUI, Xuefeng YU, Yudong LI, Wu LU, Chengfa HE, and Qi GUO, "Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers", IEEE Transactions on Nuclear Science, 68(7): 1423-1429, 2021.
[2] Qiwen ZHENG, Jiangwei CUI, Xuefeng YU, Yudong LI, Wu LU, Chengfa HE, and Qi GUO, "Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology", IEEE Transactions on Nuclear Science, 68(10): 2516-2523, 2021.
[3] Qiwen ZHENG, Jiangwei CUI, Liewei XU, Bingxu NING, Kai ZHAO, Mingjie SHEN, Xuefeng YU, Wu LU, Chengfa HE, Diyuan REN and Qi GUO, "Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors", IEEE Transactions on Nuclear Science, 66(4): 702-709, 2019.
[4] Qiwen ZHENG, Jiangwei CUI, Wu LU, Hongxia GUO, Jie LIU, Xuefeng YU, Liang WANG, Jiaqi LIU, Chengfa HE, Diyuan REN, Suge YUE, Yuanfu ZHAO and Qi GUO, "Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM", IEEE Transactions on Nuclear Science, 66(6): 892-898, 2019.
[5] Qiwen ZHENG, Jiangwei CUI, Xuefeng YU, Wu LU, Chengfa HE, Teng MA, Jinghao ZHAO, Diyuan REN and Qi GUO, "Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose", IEEE Transactions on Nuclear Science, 65(2): 691-697, 2018.
[6] Qiwen ZHENG, Jiangwei CUI, Wu LU, Hongxia GUO, Jie LIU, Xuefeng YU, Ying WEI, Liang WANG, Jiaqi LIU, Chengfa HE and Qi GUO, "The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose", IEEE Transactions on Nuclear Science, 65(8): 1920-1927, 2018.
[7] Qiwen ZHENG, Jiangwei CUI, Mengxin LIU, Hang ZHOU, Mohan LIU, Ying WEI, Dandan SU, Teng MA, Wu LU, Xuefeng YU, Qi GUO and Chengfa HE, "Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs", IEEE Transactions on Nuclear Science, 64(7): 1897-1904, 2017.
[8] Shanxue XI, Qiwen ZHENG, Wu LU, Jiangwei CUI, Ying WEI and Qi GUO, "Modeling of TID-induced leakage current in ultra-deep submicron SOI NMOSFETs", Microelectronics Journal, 102: 104829-1-8, 2020.
[9] Shanxue XI, Qiwen ZHENG, Wu LU, Jiangwei CUI, Ying WEI, Baoshun WANG and Qi GUO, "The influence of channel width on total ionizing dose responses of the 130-nm H-gate partially depleted SOI NMOSFETs", Radiation Effects and Defects in Solids, 175(5-6):1-8, 2020.
[10] Qiwen ZHENG, Jiangwei CUI, Ying WEI, Xuefeng YU, Wu LU, Diyuan REN and Qi GUO, "Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs", CHIN. PHYS. LETT., 35(4): 046102-1-4, 2018.
Authorized Invention Patents:
[1] Jiangwei CUI, Qiwen ZHENG, Ying WEI, Jing SUN, Xuefeng YU, Qi GUO, Wu LU, Chengfa HE, Diyuan REN, A test method for the effect of total dose irradiation on the negative bias temperature instability of PMOSFET, ZL201711329107.0
[2] Qiwen ZHENG, Jiangwei CUI, Xiaolong LI, Ying WEI, Xuefeng YU, Yudong LI, Qi GUO, A circuit level total dose radiation effect simulation method, ZL202011125626.7
[3] Qiwen ZHENG, Jiangwei CUI, Xiaolong LI, Ying WEI, Xuefeng YU, Yudong LI, Qi GUO, A circuit simulation method for coupling total dose effect and process fluctuation, ZL202011125363.X
Field of research:
Microelectronics and Solid State Electronics
