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Position in International Organization

  • Hongsheng Shi  /  无
  • Education: 无
    Direction:  
  • E-mail: shihs@ms.xjb.ac.cn
    Postal Code: 830011
  • Address: Technical Institute of Physics & Chemistry Chinese Academy of Sciences 40-1 South Beijing Road Urumqi, Xinjiang 830011 China
Resume

2019.11-Present: Researcher fellowship 

Xinjiang Technical Institute of Physics&Chemistry, Chinese Academy of Science 

2007.5-2019.10: Assitant Professor, associate Professor(2008), Professor(2013) 

College of Materials Science and Engineering, China Jiliang University 

2004.1-2007.3: R&D senior engineer, General Electric China Co., Ltd 

2000.9-2004.1: Ph..D, Majored in Materials Engineering 

Shanghai Institute of Ceramics, Chinese Academy of Sciences 

1997.9-2000.7: Master degree, Majored in Solid State Physics 

Fujian Institute of Research on the structure of matters, Chinese Academy of Sciences 

1992.9-1996.7: Bachelor degree, Majored in Chemistry 

Chemistry department, Southwest Normal University
   
Main Research Areas and Achievements：
Expertise in bulk crystal growth, especially crystal growth by Bridgman method. Some high quality crystals with large sizes have been successfully grown by Bridgman method, such as LaBr3:Ce、SrI2:Eu、LaCl3:Pr、NaBi(WO4)2, etc.    
 
Main Honor：

1、Science and Technology Progress Award in the Jiangxi Province, 2013. 

2、Science and Technology Progress Award in the Zhejiang Province, 2009. 

 

Representative Publications： 

[1] Hongsheng Shi, Dingzhong Shen, Guohao Ren, Haibing Zhang, Bo Gong, Qun Deng, Growth of NaBi(WO4)2 crystal by modified-Bridgman method, Journal of Crystal Growth，2002, 240:459-462. 

[2] Hongsheng Shi,* Laishun Qin, Wenxiang Chai, Kangying Shu, The radiation induced colour centers in the NaBi(WO4)2 crystal, Journal of Alloys and Compounds, 2009, 475:510-512. 

[3] Qinhua Wei, Hongsheng Shi,* Xiaofeng Chen, Laishun Qin, Guohao Ren, Kangying Shu, Growth and scintillation properties of the Na2W2O7 crystal, Journal of Crystal Growth，2010, 312: 1883-1885. 

[4] Hongsheng Shi,* Laishun Qin, Wenxiang Chai, Jiayu Guo, Qinhua Wei, Guohao Ren, Kangying Shu, The LaBr3:Ce Crystal Growth by Self-Seeding Bridgman Technique and Its Scintillation Properties, Crystal Growth & Design, 2010,10: 4433-4436. 

[5] Wei Qinhua, Shi Hongsheng*, Chai Wenxiang, Qin Laishun, Shu Kangying, Preparation and luminescence Properties of the Na2W2O7 Crystal, Chinese Physics Letter, 2011, vol28 No11: 118104. 

[6] Hongsheng Shi,* Wenxiang Chai, xiaofeng Chen, Laishun Qin, Kangying Shu, Growth andscintillation properties of the Eu2W3O12 crystal, Journal of Crystal Growth，2012, 343:73-76. 

[7] Zhengguo Li, Hanbo Bao, Yanguo Ding, Hongsheng Shi,* Laishun Qin, Kangyin Shu, The radiation induced color centers of the LaBr3:Ce crystal, Radiation Measurements, 2014, vol65:14-17. 

[8] Qinhua Wei, Hongsheng Shi,* Zhenzhen Zhou, Guanghui Liu, Zhi Chen, Laishun Qin, Kangying Shu and Qian Liu, A study on the structure, luminescence and thermo-stability of polycrystalline Gd2Si2O7:Ce and (Gd,La)2Si2O7:Ce, Journal of Materials Chemistry C, 2017, 5:1443 – 1451 

[9] Qinhua Wei, Yiqing Liu, Yi Tao Miao, Yuxi Li, Hongsheng Shi,* Laishun Qin, E?ects of Lanthanum substitution on the luminescence properties and energy transfer mechanism of Gd9.33(SiO4)6O2:Ce polycrystalline, Journal of Luminescence, 2018, 194:610-616. 

[10] Qinhua Wei, Jia Lin, Hongsheng Shi,* Gao Tang, Wenxiang Chai, Laishun Qin, Enhanced Transparency of Rough Surface Sapphire by Surface Vitrifaction Process, Applied Materials & Interfaces, 2018, 10:7693-7696.
 

Authorized Invention Patents： 

[1] Hongsheng Shi, Kangying Shu, One method to produce the high purity anhydrous bromide compound, China, patent number: ZL 2010 1 0239945.0. 

[2] Hongsheng Shi, Kangying Shu, One method to prepare the cerium doped choride bromide lanthanum scintillation crystal, China, patent number: ZL 20111 0177572.3. 

 

Field of Research： 

My Research mainly focuses on two areas. One is the bulk crystal growth. The other is the optical-electric crystals, especially the non-linear optical crystal and the scintillation crystal. 

Commitment to research the situation

2019.11-Present: Researcher fellowship 

Xinjiang Technical Institute of Physics&Chemistry, Chinese Academy of Science 

2007.5-2019.10: Assitant Professor, associate Professor(2008), Professor(2013) 

College of Materials Science and Engineering, China Jiliang University 

2004.1-2007.3: R&D senior engineer, General Electric China Co., Ltd 

2000.9-2004.1: Ph..D, Majored in Materials Engineering 

Shanghai Institute of Ceramics, Chinese Academy of Sciences 

1997.9-2000.7: Master degree, Majored in Solid State Physics 

Fujian Institute of Research on the structure of matters, Chinese Academy of Sciences 

1992.9-1996.7: Bachelor degree, Majored in Chemistry 

Chemistry department, Southwest Normal University
   
Main Research Areas and Achievements：
Expertise in bulk crystal growth, especially crystal growth by Bridgman method. Some high quality crystals with large sizes have been successfully grown by Bridgman method, such as LaBr3:Ce、SrI2:Eu、LaCl3:Pr、NaBi(WO4)2, etc.    
 
Main Honor：

1、Science and Technology Progress Award in the Jiangxi Province, 2013. 

2、Science and Technology Progress Award in the Zhejiang Province, 2009. 

 

Representative Publications： 

[1] Hongsheng Shi, Dingzhong Shen, Guohao Ren, Haibing Zhang, Bo Gong, Qun Deng, Growth of NaBi(WO4)2 crystal by modified-Bridgman method, Journal of Crystal Growth，2002, 240:459-462. 

[2] Hongsheng Shi,* Laishun Qin, Wenxiang Chai, Kangying Shu, The radiation induced colour centers in the NaBi(WO4)2 crystal, Journal of Alloys and Compounds, 2009, 475:510-512. 

[3] Qinhua Wei, Hongsheng Shi,* Xiaofeng Chen, Laishun Qin, Guohao Ren, Kangying Shu, Growth and scintillation properties of the Na2W2O7 crystal, Journal of Crystal Growth，2010, 312: 1883-1885. 

[4] Hongsheng Shi,* Laishun Qin, Wenxiang Chai, Jiayu Guo, Qinhua Wei, Guohao Ren, Kangying Shu, The LaBr3:Ce Crystal Growth by Self-Seeding Bridgman Technique and Its Scintillation Properties, Crystal Growth & Design, 2010,10: 4433-4436. 

[5] Wei Qinhua, Shi Hongsheng*, Chai Wenxiang, Qin Laishun, Shu Kangying, Preparation and luminescence Properties of the Na2W2O7 Crystal, Chinese Physics Letter, 2011, vol28 No11: 118104. 

[6] Hongsheng Shi,* Wenxiang Chai, xiaofeng Chen, Laishun Qin, Kangying Shu, Growth andscintillation properties of the Eu2W3O12 crystal, Journal of Crystal Growth，2012, 343:73-76. 

[7] Zhengguo Li, Hanbo Bao, Yanguo Ding, Hongsheng Shi,* Laishun Qin, Kangyin Shu, The radiation induced color centers of the LaBr3:Ce crystal, Radiation Measurements, 2014, vol65:14-17. 

[8] Qinhua Wei, Hongsheng Shi,* Zhenzhen Zhou, Guanghui Liu, Zhi Chen, Laishun Qin, Kangying Shu and Qian Liu, A study on the structure, luminescence and thermo-stability of polycrystalline Gd2Si2O7:Ce and (Gd,La)2Si2O7:Ce, Journal of Materials Chemistry C, 2017, 5:1443 – 1451 

[9] Qinhua Wei, Yiqing Liu, Yi Tao Miao, Yuxi Li, Hongsheng Shi,* Laishun Qin, E?ects of Lanthanum substitution on the luminescence properties and energy transfer mechanism of Gd9.33(SiO4)6O2:Ce polycrystalline, Journal of Luminescence, 2018, 194:610-616. 

[10] Qinhua Wei, Jia Lin, Hongsheng Shi,* Gao Tang, Wenxiang Chai, Laishun Qin, Enhanced Transparency of Rough Surface Sapphire by Surface Vitrifaction Process, Applied Materials & Interfaces, 2018, 10:7693-7696.
 

Authorized Invention Patents： 

[1] Hongsheng Shi, Kangying Shu, One method to produce the high purity anhydrous bromide compound, China, patent number: ZL 2010 1 0239945.0. 

[2] Hongsheng Shi, Kangying Shu, One method to prepare the cerium doped choride bromide lanthanum scintillation crystal, China, patent number: ZL 20111 0177572.3. 

 

Field of Research： 

My Research mainly focuses on two areas. One is the bulk crystal growth. The other is the optical-electric crystals, especially the non-linear optical crystal and the scintillation crystal. 

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