October 2020 - present：Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Solid State Radiation Physics Laboratory, Associated research fellow, Master Tutor;
July 2012-October 2020：Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Solid State Radiation Physics Laboratory, Assistant research fellow
September 2005 - June 2012：Lanzhou University, School of Physical Science and Technology, Microelectronics and Solid-state Electronics, PhD;
September 2001 - June 2005：Lanzhou University, School of Physical Science and Technology, Microelectronics, BA.
Research direction:
Current research direction is the study of radiation effects on electronic devices, mainly based on computer simulation technology to carry out basic research on radiation damage mechanism of devices. This year, have published more than 20 papers and presided over 4 national and provincial scientific research projects.
Selected Awards and Honors：
Awarded the first Prize of Science and Technology Progress of Xinjiang Uygur Autonomous Region in 2018 (8th Accomplisher)
Awarded the first prize of Science and Technology Progress of Xinjiang Uygur Autonomous Region in 2021 (5th Accomplisher)
Representative Publications：
1. Ying Wei, Jaingwei Cui, Xu Cui, Qiwen Zheng, Xiaolong Li, Jing Sun, Qi Guo, Xiaolong Lv. Effect of total dose radiation on 1/f noise characteristics of bulk silicon N-FinFET [J]. Aerospace microelectronics, 2021, (2)：74-80.
2. Ying Wei, Lin Wen, Yudong Li, Qi Guo. Simulation of the total ionization dose effect on 4T CMOS image sensor dark current [J]. Journal on Numerical Methods and Computer Application, 2020,41(02):143-150.
3. Ying. Wei et al., "Total Ionizing Dose Effects on Time-dependent Dielectric Breakdown in PMOS Capacitance Based on 65nm Process," 2018 International Conference on Radiation Effects of Electronic Devices (ICREED), 2018, pp. 1-3.
4. Ying Wei, Jaingwei Cui, Qiwen Zheng, Teng Ma, Jing Sun, Lin Wen, Xuefeng Yu, Qi Guo. Effect of radiation-induced trap charge on transferring characteristics of 0.18 μm N-MOSFET by TCAD Simulation [J]. MODEN APPLIED PHYSICS, 2017,8(04):47-51.
5. Baoshun Wang, Jaingwei Cui, Qiwen Zheng, Shanxue Xi, Ying Wei, Qiqi Lei, Qi Guo. Investigations on Hot Carrier Injection and Total Ionizing Dose Effect of 22 nm Bulk FinFET[J].RESEARCH & PROGRESS OF SSE,2020,40(05):384-388.
6. Haonan Feng, Sheng Yang, Xiaowen Liang, Dan Zhang, Xiaojuan Pu, Jing Sun, Ying Wei, Jiangwei Cui, Yudong Li, Xuefeng Yu, Qi Guo. Static and dynamic radiation damage of silicon carbide VDMOS and their comparison[J]. Atomic Energy Science and Thechnology, 2022, 56(04):767-774.
7. Shanxue Xi, Qiwen Zheng, Jiangwei Cui, Ying Wei, Shuai Yao, Chengfa He, Qi Guo, Wu Lu.Leakage current model of Total Ionizing Dose effect in ultra deep submicron SOI MOSFET devices[J].Journal of Terahertz Science and Electronic Information Technology, 2019, 17(06):1107-1111.
8. Qiwen Zheng, Jiangwei Cui, Ying Wei, Xuefeng Yu, Wu Lu, Diyuan Ren, Qi Guo. Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs[J]. Chinese Physics Letters,2018,35(04):82-85.
Patents：
1. Ying Wei, Jaingwei Cui, Qiwen Zheng, Xu Cui, Qi Guo, Xuefeng Yu. A simulation and analysis method for the total ionization dose effect of multigate FinFET, 2021-11-25, China, 202111409788.8；
2. Qiwen Zheng, Jaingwei Cui, Xiaolong Li, Ying Wei, Xuefeng Yu, Yudong Li, Qi Guo. A circuit level total dose radiation effect simulation method, 2020-10-20, China, CN202011125626.7；
3. Qiwen Zheng, Jaingwei Cui, Xiaolong Li, Ying Wei, Xuefeng Yu, Yudong Li, Qi Guo. A circuit simulation method for coupling total dose effect and process fluctuation, 2020-10-20, China, CN202011125363.X；
4. Jaingwei Cui, Qiwen Zheng, Ying Wei, Jing Sun, Xuefeng Yu, Qi Guo, Wu Lu, Chengfa He, Diyuan Ren. A test method for the effect of total dose irradiation on the negative bias temperature instability of PMOSFET, 2017-12-13, China, ZL201711329107.0.
Field of research：
Simulation study on radiation Effect of electronic devices
